| Autor: |
Liu, Chengjun, Zhang, Yuyi, Zhu, Yaoming, Wang, Lixi, Chang, Jianhua, Li, Qing, Zhang, Xiaobing, Pan, Jiangyong, Chen, Jing, Lei, Wei |
| Zdroj: |
IEEE Electron Device Letters; 2024, Vol. 45 Issue: 7 p1229-1232, 4p |
| Abstrakt: |
Flexible deep ultraviolet (UV) photodetectors have received extensive attention due to low background noise and high reliability in operation environments. Herein, we demonstrate a highly performance deep UV photodetector based on CsCu2I3/Mg0.2Zn0.8O bulk heterojunction. Mg0.2Zn0.8O quantum dots as electron transfer sites can facilitate the transfer of photogenerated carriers to improve the device performance. As a result, the CsCu2I3/Mg0.2Zn0.8O based photodetector exhibits high responsivity of 1.12 A/W and specific detectivity of $3.26\times 10^{{12}}$ Jones. Moreover, the flexible photodetector maintains relatively high performance after 2000 times bending cycles at curvature radius of 5 mm. Our work provides a reliable and low-cost approach for highly performance flexible deep UV photodetection. |
| Databáze: |
Supplemental Index |
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