The use of saddle-field ion sources for etching semiconductor materials
| Autor: | Goldspink, G.F., Revell, P.J. |
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| Zdroj: | Microelectronics Journal; November-December 1980, Vol. 11 Issue: 6 p13-17, 5p |
| Abstrakt: | Etch selectivities, etch rates and the erosion of source components have been measured using two sizes of saddle-field source with reactive and non-reactive gases. |
| Databáze: | Supplemental Index |
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