| Autor: |
Prozheev, Igor, Heikkinen, Tanja, Makkonen, Ilja, Mizohata, Kenichiro, Tuomisto, Filip |
| Zdroj: |
Japanese Journal of Applied Physics; July 2024, Vol. 63 Issue: 7 p071001-071001, 1p |
| Abstrakt: |
We report positron annihilation results on in-grown and proton-irradiation-induced vacancy defects in AlN single crystals grown by physical vapor transport. The samples were irradiated with 100 keV H+ions to varying fluences in the range of 5 × 1014− 2 × 1018ions cm–2. Doppler broadening of annihilation radiation was recorded in as-grown and irradiated samples with a slow positron beam with varying implantation energy. Doppler results combined with first principles theoretical calculations show that the 100 keV H+irradiation introduces isolated VAlon the ion track and VN-rich vacancy clusters at the end of the ion range. The results suggest that the excess amount of detected VNoriginates from a high concentration of in-grown VN. So far, these defects have been considered to be unidentified negative ion-like defects in AlN. |
| Databáze: |
Supplemental Index |
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