| Autor: |
Yu, Xin-Yu, Wang, Qian, Li, Hui-Lin, Wan, Yi-Jun, Liang, En-Meng, Wang, Chun-Ming |
| Zdroj: |
ChemPhysMater; October 2024, Vol. 3 Issue: 4 p431-439, 9p |
| Abstrakt: |
Owing to their exceptional piezoelectric effects, piezoelectric materials play a crucial role in high-end technologies and contribute significantly to the national economy. Bismuth layer-structured ferroelectrics (BLSFs) possess high Curie temperatures, making them a focal point of research in high-temperature piezoelectric sensor devices. However, their poor piezoelectric performance and low direct-current (DC) electrical resistivity hinder their effective deployment in high-temperature applications. To overcome these shortcomings, we employed composition optimization by partially substituting bismuth ions with rare-earth praseodymium ions. This approach enhances the piezoelectric performance and improves the DC electrical resistivity by preventing the loss of volatile bismuth ions and stabilizing the bismuth oxide layer (Bi2O2)2+, thereby reducing the concentration of oxygen vacancies. Consequently, we achieved a large piezoelectric constant d33of 23.5 pC/N in praseodymium-substituted Bi5Ti3FeO15, which is three times higher than that of pure Bi5Ti3FeO15(7.1 pC/N), along with a high Curie temperature TCof 778 °C. Additionally, the optimal composition of 4 mol% praseodymium-substituted Bi5Ti3FeO15exhibits good thermal stability of electromechanical coupling characteristics up to 300 °C. This study holds promise for a wide array of high-temperature piezoelectric applications and has the potential to accelerate the development of high-temperature piezoelectric sensor technologies. |
| Databáze: |
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