| Autor: |
Wolf, M., Brunner, F., Last, C., Halhoul, H., Rentner, D., Treidel, E. Bahat, Wurfl, J., Hilt, O. |
| Zdroj: |
IEEE Electron Device Letters; 2024, Vol. 45 Issue: 6 p1048-1051, 4p |
| Abstrakt: |
AlN-based GaN-channel HEMTs with MOCVD-grown AlGaN/GaN/AlN epistack were realized on AlN substrates, achieving 400 mA/mm current density at $\text{V}_{\text {GS}}=1$ V and 125 V/ $\mu \text{m}$ breakdown voltage ( $\text{V}_{\text {Br}}{)}$ scaling. Unlike for similar AlN-on-SiC devices, the high $\text{V}_{\text {Br}}$ scaling also applies above 1000 V. This is attributed to the significantly reduced AlN-buffer defect density. A record power density of 1.17 GW/cm2 is extracted from a device with 2.2 kV breakdown voltage. High-voltage switching transients at 0.6 A / 464 V off-state voltage show dispersions effects attributed to the AlN-buffer/GaN-channel interface quality. |
| Databáze: |
Supplemental Index |
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