| Autor: |
Hu, Tao, Sun, Xiaoqing, Bai, Mingkai, Jia, Xinpei, Dai, Saifei, Li, Tingting, Han, Runhao, Ding, Yajing, Fan, Hongyang, Zhao, Yuanyuan, Chai, Junshuai, Xu, Hao, Si, Mengwei, Wang, Xiaolei, Wang, Wenwu |
| Zdroj: |
IEEE Electron Device Letters; 2024, Vol. 45 Issue: 5 p825-828, 4p |
| Abstrakt: |
In this work, we demonstrate the enlargement of the memory window of Si channel FeFET with ferroelectric Hf0.5Zr0.5O2 by gate-side dielectric interlayer engineering. By inserting a 3 nm Al2 O3 dielectric interlayer between TiN gate metal and ferroelectric Hf0.5Zr0.5O2, we achieve a memory window of 4.1 V with endurance of ~104 cycles and retention over 10 years. The physical origin of memory window enlargement is clarified to be charge trapping at the Al2O3/Hf0.5Zr0.5O2 interface, which has an opposite charge polarity to the trapped charges at the Hf0.5Zr0.5O2/SiOx interface. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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