| Autor: |
Suh, Yoon-Je, Jeong, Jaeyong, Kim, Bong Ho, Kuk, Song-Hyeon, Kim, Seong Kwang, Kim, Joon Pyo, Kim, Sanghyeon |
| Zdroj: |
IEEE Electron Device Letters; 2024, Vol. 45 Issue: 5 p766-769, 4p |
| Abstrakt: |
Achieving ferroelectricity on high-speed, low-power III-V substrate is important for high-performance non-volatile devices, but was rarely studied. We systematically investigated the ferroelectric (FE) characteristic of Hf0.5Zr0.5Ox (HZO) metal/ferroelectric/ semiconductor (MFS) capacitors on InGaAs substrate over a wide annealing temperature region. Here, we achieved ferroelectricity even at a very low annealing temperature of 310 °C, which is ideal for a low thermal budget III-V process. Also, after 500 °C annealing and $10^{{4}}$ electric-field cycling, a 2Pr value of $68~\mu \text{C}$ /cm2 for HZO was achieved which is the highest among reported FE films on III-V substrates. FE characteristic of different annealing temperature was analyzed by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Both XRD and TEM analysis supported increased orthorhombic (o-) phase ratio as a result of higher annealing temperature and electric-field cycling, respectively. Our study on the integration of FE material and III-V substrate will be a pathway for future high-performance devices such as non-volatile radio-frequency switches and FeNAND. |
| Databáze: |
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