| Autor: |
Wen, Xinyi, Shankar, Bhawani, Lee, Kwangjae, Kasai, Hayao, Noshin, Maliha, Chun, Jaeyi, Nakazato, Yusuke, Chowdhury, Srabanti |
| Zdroj: |
IEEE Electron Device Letters; 2024, Vol. 45 Issue: 4 p653-656, 4p |
| Abstrakt: |
High-frequency, up to 10 MHz, switching of normally-on GaN trench CAVETs was demonstrated using an on-wafer double pulse test (DPT) system, along with high-temperature switching up to 300 °C reported for the first time. By innovatively inserting a low-temperature (LT) GaN interfacial layer to inhibit Mg out-diffusion from p-GaN, a record-high field effect mobility of 1821 cm2/( $\text{V}\cdot \text{s}$ ) in a regrown AlGaN/GaN channel was confirmed from device transconductance characteristics, which enabled low-loss high-frequency switching capability of the fabricated device. CAVETs were effectively scaled up to 3-finger structures with reduced specific on-resistance ( $\text{R}_{\text {on,sp}})$ to 0.98 $\text{m}\Omega \cdot $ cm2. The device was switched using DPT, showing low turn-off/on times of 2.6/4.8 ns at 1 MHz and 4.5/7.0 ns at 10 MHz switching frequency. The high channel mobility of CAVET not only facilitates robust 10-MHz switching at room temperature but also ensures effective switching functionality even under high-temperature conditions reaching up to 300 °C. |
| Databáze: |
Supplemental Index |
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