| Autor: |
Shi, Yepeng, Liu, Guoxia, Wu, Xiaomin, Zhou, Chengjie, Yang, Chengzhi, Yang, Zhenyu, Shan, Fukai |
| Zdroj: |
IEEE Transactions on Electron Devices; 2024, Vol. 71 Issue: 4 p2789-2793, 5p |
| Abstrakt: |
MoS2 field-effect transistors (FETs) based on high- ${k}$ gate insulators (such as ZrO2, HfO2, and Al2O3) have been explored. However, the preparation of high- ${k}$ dielectrics typically requires high-vacuum equipment, leading to high cost. In this report, high- ${k}$ ZrO2 dielectrics were prepared by a facile ultraviolet-ozone (UVO)-assisted solution process. The ZrO2 thin films annealed at different temperatures were investigated by optical transmission spectroscopy, atomic-force microscopy, and impedance analyzer. Subsequently, MoS2 FETs based on ZrO2 dielectrics annealed at various temperatures were prepared and the electrical performances of the FETs were investigated. The MoS2 FET based on ZrO2 dielectric annealed at 300 °C demonstrates a high field-effect mobility of 89.6 cm2/Vs, an ON-current of $10^{-{5}}$ A/ $\mu \text{m}$ , an ON/OFF current ratio of $10^{{8}}$ , and a subthreshold swing (SS) of 95.2 mV/dec. To explore the prospective logic applications of MoS2/ZrO2 FETs, a resistor-loaded inverter was fabricated and a high gain of 32 was achieved. This work demonstrates the feasibility of solution-processed high- ${k}$ dielectrics for 2-D semiconductor FETs, providing a new route to realize cost-effective and low-power 2-D semiconductor electronics and circuits. |
| Databáze: |
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