Modeling of the gate leakage in MOSFETs with Al2O3/β-Ga2O3gate stack

Autor: Rogers, David J., Teherani, Ferechteh H., De Santi, C., Fregolent, M., Brusaterra, E., Tetzner, K., Würfl, J., Buffolo, M., Meneghesso, G., Zanoni, E., Meneghini, M.
Zdroj: Proceedings of SPIE; March 2024, Vol. 12887 Issue: 1 p128870B-128870B-4, 1159835p
Databáze: Supplemental Index