| Autor: |
Yuan, Xiaojie, Li, Jianjun, Sun, Kaiwen, Huang, Jialiang, Cui, Xin, Wang, Ao, Xie, Bingqiao, Hoex, Bram, Green, Martin, Hao, Xiaojing |
| Zdroj: |
EcoEnergy; March 2024, Vol. 2 Issue: 1 p181-191, 11p |
| Abstrakt: |
The liquid‐phase‐assisted grain growth (LGG) process is a promising strategy to fabricate large‐grain pure sulfide Cu2ZnSnS4(CZTS) layers that span the absorber thickness and improve the carrier collection efficiency in photovoltaic devices. Li doping is an effective route to promote such LGG process of Cu2ZnSn(S,Se)4(CZTSSe) as it can provide liquid Li‐Se phase facilitating the growth of large‐grain CZTSSe. However, the detailed function of the added Li in grain growth has rarely been investigated in both CZTS and CZTSSe, as the reported in situ, and pre‐depositiondoping strategies usually suffer from substantial Li losses during the spin‐coating process and/or the high‐temperature sulfurization process. Herein, by monitoring the temperature‐dependent Li loss during the sulfurization process, we demonstrate that a small proportion of the added Li can remain at the CZTS film from the early sulfurization stage and provide Li‐S flux to promote the LGG process. An encouraging efficiency of 10.53%, with a remarkably high short‐circuit current density of 22.6 mA/cm2and open‐circuit voltage of 0.744 V, is achieved by a significantly enlarged grain size of 3 μm with Li addition. This work could enhance the knowledge of employing Li‐S as flux for growing large‐grain chalcogenide absorbers for high performance devices with better carrier transport. An enhanced liquid‐phase assisted grain growth (LGG) process for kesterite Cu2ZnSnS4(CZTS) is achieved by adding Li into CZTGS nanoparticle layer at the bottom of sputtered precursor. The LGG process was enhanced by the Li‐S flux from the residual Li at above 350°C, thus significantly improving the carrier collection efficiency and enabling 10.53% efficient Cd‐free CZTS solar cells. |
| Databáze: |
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