| Autor: |
Menokey, M. Anuja, Ajoy, Arvind |
| Zdroj: |
IEEE Transactions on Electron Devices; January 2024, Vol. 71 Issue: 1 p91-98, 8p |
| Abstrakt: |
A closed-form model to calculate the 2-D electron gas (2-DEG) charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrödinger’s equation for a finite triangular potential well. Asymptotic expressions of Airy functions are used to compute an initial value of subband energy. A new, unified expression to update the surface potential due to Poisson’s equation is presented. The modified Fang–Howard (M.F.H.) function is then employed to develop a closed-form correction to the subband energy using first-order perturbation theory. No fitting parameters are used. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness, and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
