| Autor: |
Pampori, Ahtisham, Nazir, Mohammad Sajid, Dangi, Raghvendra, Chou, Min Li, Lee, Geng Yen, Chauhan, Yogesh Singh |
| Zdroj: |
IEEE Transactions on Electron Devices; January 2024, Vol. 71 Issue: 1 p84-90, 7p |
| Abstrakt: |
For the first time, we present a large-signal width-scalable physics-based SPICE-compatible compact model for gallium nitride (GaN)-based dual-gate RF switches with improved harmonic control in the OFF-regime. The bias dependence of device capacitances is improved to offer accurate large-signal compression and harmonic-balance simulations in both the ON- and OFF-state. The distributed nature of the serpentine gate in these devices is captured using a robust gate network. Calibrated EM models have been used to incorporate the impact of manifolds on the RF performance of these devices. The model is validated against experimental data from multiple ${0.5}~\mu\text{m}$ node, dual-gate depletion-mode GaN-on-Si switch devices. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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