| Autor: |
Thongyim, Inthanee, Jaturaphagorn, Pawaphat, Srikam, Saranisorn, Chaisakul, Papichaya |
| Zdroj: |
Results in Optics; February 2024, Vol. 14 Issue: 1 |
| Abstrakt: |
We focus on investigating the possibility to achieve a direct butt coupling integration of SiNxpassive waveguides with germanium/silicon–germanium (Ge/SiGe) multiple quantum wells (MQWs) on a thick graded buffer platform using 3D finite-difference time-domain simulation. Despite the promising potential of a thick graded buffer platform to provide superior crystal quality, its integration with SiNxwaveguides has not been discussed so far. We find that in spite of a relatively-low refractive index contrast of the graded buffer platform, it is still possible to attain low-voltage SiNxwaveguide-integrated Ge/SiGe MQWs optical modulators around the telecommunication wavelength of 1.31 µm with competitive integrated extinction ratio and insertion loss performance with a compact footprint. Moreover, the fabrication tolerance and the reflection from the butt coupling scheme between the SiNxwaveguides and the Ge/SiGe MQWs are also promisingly considered. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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