| Autor: |
Sugiura, Toshio, Hayakawa, Teruo |
| Zdroj: |
Bulletin of the Chemical Society of Japan; January 1961, Vol. 34 Issue: 1 p58-63, 6p |
| Abstrakt: |
The secondary electron emission from the non-activated and activated surfaces of copperberyllium (4%) by the impacts of various noble gas and hydrocarbon ions was studied together with the determination of the surface structure by the electron diffraction analysis. The main results obtained are as follows.(1) The considerably thick layer of beryllium oxide is formed in the neighborhood of the target surface activated by oxygen at the temperature range of 350 to 480°C.(2) The oxide films of copper are formed on the target surface by electropolishing, but these oxides easily undergo reduction by the prolonged ion bombardments.(3) The optimum temperature of activation for the electron yield seems to be about 420°C, and the electron yield for the activated target surface treated at 350 or 420°C is only slightly dependent upon the ion kinetic energy.(4) No measurable decrease in the electron yield for the activated surface treated at 420°C was obtained by the prolonged bombardments of various positive ions for ten hours, while the electron yield for the non-activated surface decrease about 20 per cent by the prolonged bombardments of ions for five hours.(5) Under the present experimental conditions, the mechanism of the electron ejection process seems to be considerably complicated and it is difficult to deduce any definite conclusion for the electron ejection process. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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