| Autor: |
Ochiai, Y., Manako, S., Samukawa, S., Takeuchi, K, Yamamoto, T. |
| Zdroj: |
Microelectronic Engineering; January 1996, Vol. 30 Issue: 1-4 p415-418, 4p |
| Abstrakt: |
Nanometer electron beam lithography has been used for fabrication of sub-0.1 μm MOSFETs. Chemically amplified resist as a single layer mask showed high resolution by optimizing the resist process. Proximity effect correction was applied and showed a good line width control. Operation of a 40nm-polysilicon gate NMOSFET was confirmed. |
| Databáze: |
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| Externí odkaz: |
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