| Autor: |
Mitsui, Soichiro, Tanaka, Amane, Takaki, Ryuji, Itoh, Tohru, Atoda, Nobufumi |
| Zdroj: |
Microelectronic Engineering; January 1996, Vol. 30 Issue: 1-4 p199-202, 4p |
| Abstrakt: |
Deflection of the X-ray mask membrane caused by stepper motion, i.e., changing the mask-to-wafer gap and stepping the wafer parallel to the mask, was evaluated. The effects of film tension, mask configuration and velocity of wafer stage movement on the membrane behavior were examined. The deflection caused by parallel stepping in the proximity gap is very sensitive to the parallelism between the mask and the wafer. The membrane deflection of less than 2 μm and the relaxation time of less than 0.2 sec were observed under the condition of a 20 μm gap and within 0.2 μm/20 mm of mask inclination. It was confirmed that the relaxation time is inversely proportional to the tension of the film. It was also found that the mesa-type mask is capable of reducing the relaxation time to about 30 % less than that of a conventional mask, and that the membrane deflection of the mesa-type mask becomes almost half that of the conventional one. The mesa-type mask is thought to effectively reduce the membrane deflection and the relaxation time. |
| Databáze: |
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