| Autor: |
Rajabi Kalvani, Payam, Parisini, Antonella, Sozzi, Giovanna, Borelli, Carmine, Mazzolini, Piero, Bierwagen, Oliver, Vantaggio, Salvatore, Egbo, Kingsley, Bosi, Matteo, Seravalli, Luca, Fornari, Roberto |
| Zdroj: |
ACS Applied Materials & Interfaces; October 2023, Vol. 15 Issue: 39 p45997-46009, 13p |
| Abstrakt: |
The interfacial properties of a planar SnO/κ-Ga2O3p–n heterojunction have been investigated by capacitance–voltage (C–V) measurements following a methodological approach that allows consideration of significant combined series resistance and parallel leakage effects. Single-frequency measurements were carried out in both series- and parallel-model measurement configurations and then compared to the dual-frequency approach, which permits us to evaluate the depletion capacitance of diode independently of leakage conductance and series resistance. It was found that in the bias region, where the dissipation factor was low enough, they give the same results and provide reliable experimental C–Vdata. The doping profile extracted from the C–Vdata shows a nonuniformity at the junction interface that was attributed to a depletion of subsurface net donors at the n-side of the diode. This attribution was corroborated by doping profiles and carrier distributions in the n and p sides of the heterojunction obtained from the simulation of the measured C–Vdata by the Synopsys Sentaurus-TCAD suite. Hall effect measurements and Hg-probe C–Vinvestigation on single κ-Ga2O3layers, either as-grown or submitted to thermal treatments, support the hypothesis of the subsurface donor reduction during the SnO deposition. This study can shed light on the subsurface doping density variation in κ-Ga2O3due to high-temperature treatment. The investigation of the SnO/κ-Ga2O3heterointerface provides useful hints for the fabrication of diodes based on κ-Ga2O3. The methodological approach presented here is of general interest for reliable characterization of planar diodes. |
| Databáze: |
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