| Autor: |
Voloshin, A. E., Smolskii, I. L., Kaganer, V. M., Indenbom, V. L., Rozhanskii, V. N. |
| Zdroj: |
Physica Status Solidi (A) - Applications and Materials Science; March 1992, Vol. 130 Issue: 1 p61-73, 13p |
| Abstrakt: |
It is shown that the sensitivity of the plane wave X‐r ay diffraction topography to the microdefects in Si single crystals is increased in the asymmetric reflection. Smaller microdefects are revealed as compared with the symmetric reflections. The components of elastic fields of large microdefects are investigated with aid of asymmetric reflections having various orientations of the diffraction vectors. The observed images are compared with the computer simulated ones. The simultaneous existence of the microdefects of vacancy and interstitial type in the specimen is shown. The misfit volume of the microdefects can be localized or distributed over its volume causing no strong local distortions. Possibilities for the microdefect generation during the SiO2precipitation are discussed. [Russian text ignored] |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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