| Autor: |
Yuan, Hao, Liu, Keyu, Liu, Yancong, Tang, Xiaoyan, Zhou, Yu, Du, Fengyu, Han, Chao, Zhang, Yibo, Lian, Pengfei, Zhang, Yimen, Zhang, Yuming, Song, Qingwen |
| Zdroj: |
IEEE Electron Device Letters; August 2023, Vol. 44 Issue: 8 p1252-1255, 4p |
| Abstrakt: |
A novel 4H-SiC junction barrier Schottky (JBS) with deep linear graded doping (DLGD) P junction structure is proposed and fabricated to enhance the radiation tolerance of Single-Event Effect (SEE). The radiation-hardened function of the proposed new structure is confirmed via two-dimensional numerical simulation and SEE experiment. The hardened device was tested under heavy ion irradiation with linear energy transfer (LET) up to 83.5 MeV $\cdot $ cm2/mg. Test results show that the single-event leakage current (SELC) threshold voltage of the hardened device is 400 V, which is the best SEE radiation-hardened performance reported so far for high-voltage 4H-SiC JBS. Compared with the state-of-the-art counterparts, this work is about 2 times improvement in SELC threshold voltage. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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