| Autor: |
Stark, Roger, Tsibizov, Alexander, Race, Salvatore, Ziemann, Thomas, Kovacevic-Badstubner, Ivana, Grossner, Ulrike |
| Zdroj: |
Materials Science Forum; June 2023, Vol. 1092 Issue: 1 p165-170, 6p |
| Abstrakt: |
SiC power MOSFETs show very promising electrical performance for efficient and reliable high temperature operation. This work presents a novel approach for the determination of the temperature dependence of SiC power MOSFET’s channel and drift resistance components in the on-state, which are extracted based on current-voltage (I-V) and capacitance-voltage (C-V) measurements without the need of data extrapolation. The results show that the channel resistance has weak, whereas the drift resistance has strong temperature dependence. |
| Databáze: |
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