| Autor: |
Martinella, Corinna, Bathen, Marianne Etzelmüller, Javanainen, Arto, Grossner, Ulrike |
| Zdroj: |
Materials Science Forum; May 2023, Vol. 1090 Issue: 1 p179-184, 6p |
| Abstrakt: |
Cathodoluminescence spectroscopy is used to investigate the formation of point- and extended defects in SiC power MOSFETs exposed to heavy-ions. Devices showing single event leakage current (SELC) effects are analysed and compared to pristine samples. Common luminescence peaks of defect centers localized in the thermal-SiO2 are identified, together with peaks at the characteristic wavelength of extended defects. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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