| Autor: |
Race, Salvatore, Kovacevic-Badstubner, Ivana, Stark, Roger, Tsibizov, Alexander, Belanche, Manuel, Arango, Yulieth, Romano, Gianpaolo, Knoll, Lars, Grossner, Ulrike |
| Zdroj: |
Materials Science Forum; June 2023, Vol. 1091 Issue: 1 p67-71, 5p |
| Abstrakt: |
In this work, the improvement of SiC power MOSFET performance achieved using high-κ gate-dielectrics instead of the standard SiO2 is investigated by means of advanced gate-impedance characterization. The benefit of using high-κ gate-dielectrics with high dielectric constant is demonstrated by comparing SiC MOSFETs with pure high-κ, a stack of SiO2/high-κ, as well as pure SiO2. Namely, the fabricated high-κ SiC MOSFETs show a superior performance to commercial SiC MOSFETs with SiO2/SiC interface with respect to channel resistance and interface quality. The proposed characterization approach is non-destructive and applicable to packaged power devices. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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