| Autor: |
Gelineau, Guillaume, Widiez, Julie, Rolland, Emmanuel, Vladimirova, Krenema, Moulin, Alexandre, Prudkovskiy, Vladimir, Troutot, Nicolas, Gergaud, Patrice, Mariolle, Denis, Barbet, Sophie, Amalbert, Vincent, Lapertot, Gérard, Mony, Karine, Rouchier, Séverin, Boulet, Romain, Berre, Guillaume, Schwarzenbach, Walter, Bogumilowicz, Yann |
| Zdroj: |
Materials Science Forum; May 2023, Vol. 1089 Issue: 1 p71-79, 9p |
| Abstrakt: |
The Smart CutTM process offers an advantageous opportunity to provide a large number of performance-improved SiC substrates for power electronics. The crystalline quality and the electrical activation of the 4H-SiC transferred layer are then at stake when it comes to the power device reliability. In this study, we find that the H+ ion implantation used for the Smart CutTM process leads to electrical deactivation of dopants and partially disorders the material. The transferred layer fully recovers its initial crystalline quality after a 1300°C anneal, with no further evolution beyond this temperature. At this point however, the n-type dopants are still inactive. The dopant reactivation occurs in the same temperature range than that of implanted nitrogen: between 1400°C and 1700°C. After 1700°C, the initial doping level of bulk SiC is recovered. |
| Databáze: |
Supplemental Index |
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