| Autor: |
Jousseaume, Yann, Cauwet, François, Woerle, Judith, Grossner, Ulrike, Aslanidou, Sofia, Rius, Gemma, Godignon, Philippe, Ferro, Gabriel |
| Zdroj: |
Materials Science Forum; May 2023, Vol. 1089 Issue: 1 p9-14, 6p |
| Abstrakt: |
The reconstruction of 4°off 4H-SiC surfaces was investigated using Si melting at 1550°C in a SiC/Si/SiC sandwich configuration. Despite systematically obtaining a macrostepped morphology over the entire areas in contact with the liquid Si, the steps were found wavy when using as-received 4H-SiC wafers. The regularity and straightness of the steps were significantly improved when the surface reconstruction was performed on processed surfaces: on re-polished surfaces the steps were found to be regular and straight in some cases, while this was constantly observed on as-grown epitaxial layers. After a reconstruction process of 2h, the best regularity of the steps was obtained with an average width of ̴ 3-5 μm. Increasing the processed area from 1.44 to 4 cm2 did not affect the results which suggests a good scalability of the process. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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