| Autor: |
Spry, David J., Neudeck, Philip G., Chang, Carl W., Rajgopal, Srihari, Gonzalez, Jose M. |
| Zdroj: |
Key Engineering Materials; June 2023, Vol. 948 Issue: 1 p83-88, 6p |
| Abstrakt: |
Experiments are described towards optimizing tantalum silicide (TaSi2) interconnect metal film sputter-deposition and annealing in a manner compatible with the NASA Glenn two-layer interconnect silicon carbide (SiC) JFET-R IC process flow. Films deposited on 100 mm diameter wafers were investigated over a range of film thickness, sputter deposition, and post-deposition anneal conditions. An optimized process that achieved TaSi2 films free of cracking and morphological defects while nearly halving post-anneal stress was developed and will be used for completing the interconnect fabrication of prototype IC Gen. 12 SiC JFET-R ICs. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
