| Autor: |
Hamid, Mohamad Hasnan Abdull, Mohd Asri, Rahil Izzati, Nuzaihan, Mohammad, Inaba, Masafumi, Hassan, Zainuriah, Kawarada, Hiroshi, Falina, Shaili, Syamsul, Mohd |
| Zdroj: |
Key Engineering Materials; May 2023, Vol. 947 Issue: 1 p3-8, 6p |
| Abstrakt: |
Metal organic chemical vapor deposition (MOCVD) was used to grow AlGaN/GaN HEMT on a sapphire substrate with a 3.0 nm GaN cap and a sample without a GaN cap. High resolution X-ray diffraction (HRXRD) was utilized to investigate the structural characteristics of the materials. The relationship between the electrical properties and two-dimensional electron gas (2DEG) I-V and Hall Effect measurement. The I-V measurement was used to investigate the resistance properties of AlGaN/GaN heterostructures. Hall Effect measurement was used to quantify electron mobility and sheet carrier concentration in both samples. The sample with a 3.0 nm GaN cap exhibited excellent electrical properties with 436.8 Ω/sq sheet resistivity and possessed a high value of sheet carrier concentration 3.46E+14 per cm2. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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