| Autor: |
Rozé, Fabien, Tabata, Toshiyuki, Kerdilès, Sébastien, M. Rubin, Leonard, Raynal, Pierre-Edouard, Acosta-Alba, Pablo, Roh, Dwight, Opprecht, Mathieu, Mazzamuto, Fulvio |
| Zdroj: |
Diffusion and Defect Data Part B: Solid State Phenomena; May 2023, Vol. 342 Issue: 1 p79-83, 5p |
| Abstrakt: |
A SiC MOSFET fabricated on a thin 15R-SiC layer on top of a 4H-SiC would benefit from both the higher inversion channel mobility of 15R-SiC and higher bulk mobility of 4H-SiC. In this work, a method based on Al implantation followed by UV laser annealing (UV-LA) to form 15R-SiC on 4H is shown. Evaluation of crystal quality and SiC polytype identification are performed by Raman spectroscopy. We show that UV-LA is able to grow 15R-SiC and cure the crystal damaged by ion implantation until a level close to the pristine substrate. This opens new perspectives for fabrication of SiC n-type MOSFETs. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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