| Autor: |
Jousseaume, Yann, Cauwet, François, Ferro, Gabriel |
| Zdroj: |
Diffusion and Defect Data Part B: Solid State Phenomena; May 2023, Vol. 342 Issue: 1 p73-78, 6p |
| Abstrakt: |
4H-SiC/Si(liq)/4H-SiC stacks were treated at 1550-1600°C under H2 in a RF-heated cold-wall reactor in order to generate macrosteps-structuring of the 4°off SiC(0001) wafers. Using 400 μm thick liquid Si, the observed important matter transport from the edges to the center of the same wafer was attributed to RF-induced convection rolls inside the thick liquid Si. When the liquid thickness was reduced down to 30 μm, the matter transport followed this time the vertical thermal gradient like in the case of liquid phase epitaxy. The dissolution rate of the bottom (hotter) wafer was found to increase from 1.7 μm/h at 1550°C to 3.3 μm/h at 1600°C. The use of H2 gas was found essential to the system since it does not generate gas trapping (unlike Ar) and it participates to the creation of the vertical thermal gradient. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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