| Autor: |
Manikanthababu, N., Joishi, C., Biswas, J., Prajna, K., Asokan, K., Vas, J. V., Medwal, R., Meena, R. C., Lodha, S., Singh, R. |
| Zdroj: |
IEEE Transactions on Electron Devices; 2023, Vol. 70 Issue: 7 p3711-3717, 7p |
| Abstrakt: |
In situ ${I} - {V}$ and ${C}\!\!-\!\!{V}$ measurements were performed during the 120 MeV Au $^{9+}$ ion irradiation on the Pt/Al $_{{2}}\text{O}_{{3}}/\beta $ -Ga2O3, metal–oxide–semiconductor capacitors (MOSCAPs), to comprehend the swift heavy ion (SHI)-induced effects at the interface and in the device performance. At a maximum fluence of $2\times 10^{{12}}$ ions/cm2, the ${I}-\!{V}$ data showed a rise in the reverse leakage current by four orders of magnitude compared to the pristine device. The trap level (below the conduction band of Al2O3) from Poole–Frenkel emission exhibits a variation from $\sim $ 1.1 to 0.91 eV. The conduction band offset ${(\phi }_{B}{) }$ of Al $_{{2}}\text{O}_{{3}}/\beta $ -Ga2O3 changes from 1.48 to 1.25 eV as estimated under the Fowler–Nordheim tunneling mechanism. In situ ${C}\!\!-\!\!{V}$ measurements show a significant shift in the flat band voltages and increased oxide in the border and interface due to charge trapping. The X-ray photoelectron spectroscopy (XPS) measurements of Al 2p and O 1s core levels revealed the pre-existing oxygen defects in Al2O3, which increase with fluence. The deconvoluted peaks of Al 2p at 74.6 eV designated to Al-sub oxide and the O 1s peak variation in the FWHM signifies the increase in the O defects. Cross-sectional transmission electron microscopy (XTEM) measurements on the irradiated device (at $2\times 10^{{12}}$ ions/cm $^{{2}}{)}$ revealed a modulated interface of Al $_{{2}}\text{O}_{{3}}/\beta $ -Ga2O3 and the formation of an interlayer of $\sim $ 4 nm AlxGayOz. The scanning transmission electron microscope (STEM)-based high-angle annular dark-field imaging (HAADF) energy-dispersive X-ray spectroscopy (EDS) mapping revelation and the depth profiles of XPS data confirm the formation of an AlxGayOz interlayer. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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