| Autor: |
Kato, Ryoichi, Uchiyama, Haruki, Nishimura, Tomonori, Ueno, Keiji, Taniguchi, Takashi, Watanabe, Kenji, Chen, Edward, Nagashio, Kosuke |
| Zdroj: |
ACS Applied Materials & Interfaces; June 2023, Vol. 15 Issue: 22 p26977-26984, 8p |
| Abstrakt: |
For the complementary operation of two-dimensional (2D) material-based field-effect transistors (FETs), high-performance p-type FETs are essential. In this study, we applied surface charge-transfer doping from WOx, which has a large work function of ∼6.5 eV, selectively to the access region of WS2and WSe2by covering the channel region with h-BN. By reducing the Schottky barrier width at the contact and injecting holes into the valence band, the p-type conversion of intrinsically n-type trilayer WSe2FET was successfully achieved. However, trilayer WS2did not show clear p-type conversion because its valence band maximum is 0.66 eV lower than that of trilayer WSe2. Although inorganic WOxboasts high air stability and fabrication process compatibility due to its high thermal budget, the trap sites in WOxcause large hysteresis during back gate operation of WSe2FETs. However, by using top gate (TG) operation with an h-BN protection layer as a TG insulator, a high-performance p-type WSe2FET with negligible hysteresis was achieved. |
| Databáze: |
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