| Autor: |
Chae, Minji, Han, Yeongseo, Park, Yoon Hee, Choi, Dahyun, Choi, Yoojin, Kim, Sooyeon, Song, Inseon, Ko, Changhyun, Joo, Min-Kyu |
| Zdroj: |
ACS Applied Materials & Interfaces; May 2023, Vol. 15 Issue: 19 p23439-23446, 8p |
| Abstrakt: |
Two-dimensional (2D) van der Waals (vdW) layered materials have provided novel opportunities to explore interesting physical properties such as thickness-dependent bandgap, moiré excitons, superconductivity, and superfluidity. However, the presence of interlayer resistance along the thickness and Schottky barrier in metal-to-2D vdW semiconducting materials causes a limited interlayer charge injection efficiency, perturbing various intrinsic properties of 2D vdW multilayers. Herein, we report a simple but powerful contact electrode design to enhance interlayer carrier injection efficiency along the thickness by constructing vertical double-side contact (VDC) electrodes. A 2-fold extended contact area of VDC not only strongly limits an interlayer resistance contribution to the field-effect mobility and current density at the metal-to-2D semiconductor interface but also significantly suppresses both current transfer length (≤1 μm) and specific contact resistivity (≤1 mΩ·cm2), manifesting clear benefits of VDC in comparison with those in conventional top-contact and bottom-contact configurations. Our layout for contact electrode configuration may suggest an advanced electronic device platform for high-performing 2D optoelectronic devices. |
| Databáze: |
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