| Autor: |
Yamashita, Syuhei, Moriya, Ryo, Takane, Hitoshi, Wada, Yuuichi, Yamafuji, Yuto, Kikawa, Junjiroh, Matsukura, Makoto, Kojima, Takahiro, Shinohe, Takashi, Kaneko, Kentaro, Araki, Tsutomu |
| Zdroj: |
Japanese Journal of Applied Physics; June 2023, Vol. 62 Issue: Supplement 6 pSF1012-SF1012, 1p |
| Abstrakt: |
ScAlMgO4(SAM) substrates have a trigonal structure with high cleavability in the c-plane. Because this substrate can be easily cleaved, gallium oxide (Ga2O3) can be grown on the SAM substrate, and the difficulty in the heat dissipation of Ga2O3may be solved. Therefore, in this study, we performed Ga2O3growth on a SAM substrate using mist-chemical vapor deposition. When the growth temperature was varied at 500 °C, 600 °C, and 700 °C, ε-Ga2O3(004) grew dominantly, and the crystallinity improved with increasing temperature. Moreover, the grown ε-Ga2O3had orthorhombic structure and formed rotational domains. Furthermore, a phase transition to β-Ga2O3was achieved by annealing the resulting ε-Ga2O3on the SAM substrates. We also succeeded in separating the SAM substrates on which the Ga2O3thin films were grown. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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