| Autor: |
Kiloo, Misbah Manzoor, Singh, Vikram, Kumar, Manoj, Kumar, Nitin, Tripathi, Neeraj, Bhardwaj, Anil |
| Zdroj: |
International Journal of Information Technology; April 2023, Vol. 15 Issue: 4 p1895-1900, 6p |
| Abstrakt: |
A novel circuit of cross coupled negative channel metal oxide semiconductor (NMOS) active inductor based delay cell with low power and wide tuning range is proposed for a four stage differential ring voltage controlled oscillator (DRVCO). The proposed DRVCO’s architecture is designed with TSMC 0.18 μm complementary metal oxide semiconductor (CMOS) process under a supply voltage of 1.8 V for ultra wideband (UWB) applications. The proposed DRVCO demonstrates an operating range of 5.2–7.75 GHz with a control voltage (Vc) variation from 0.1 to 1.0 V. The phase noise (PN) at a carrier offset of 1 MHz is − 76.56 dBc/Hz is accomplished with a power consumption of 6.18–10.8 mW. The figure of merit (FOM) of proposed circuit is − 149.33 dBc/Hz. The proposed architecture of DRVCO aims at achieving improved tuning range with reduced chip layout area, low power dissipation and better FOM. The layout of proposed circuit is designed in TSMC 0.18 μm process using Cadence. |
| Databáze: |
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