| Autor: |
Susumago, Yuki, Liu, Chang, Hoshi, Tadaaki, Shen, Jiayi, Shinoda, Atsushi, Kino, Hisashi, Tanaka, Tetsu, Fukushima, Takafumi |
| Zdroj: |
IEEE Electron Device Letters; 2023, Vol. 44 Issue: 3 p500-503, 4p |
| Abstrakt: |
This letter describes a direct Cu bonding technology to there-dimensionally integrate heterogeneous dielets based on a chip-on-wafer configuration. 100- $\mu \text{m}$ -cubed blue $\mu $ LEDs temporarily adhered on a photosensitive resin are interconnected by semi-additive plating (SAP) without thermal compression bonding. By using SAP bonding, a lot of dielets can be stacked on thin 3D-IC chiplets. The following three key technologies are applied to solve the yield issues of SAP bonding. After pick-and-place assembly, additional coplanarity enhancement eliminates Cu bridges grown to a small gap between the $\mu $ LEDs and photosensitive resin. The $\mu $ LEDs arrays with sidewalls insulated by room-temperature ozone-ethylene-radical (OER)-SiO2-CVD are successfully bonded on sapphire wafers and a thin 3D-IC with through-Si via (TSV). Further design optimization is required, but partial seed pre-etching works well to increase the yield. Fully integrated module implementation with the 3D-ICs will be the next stage, however, we discuss a superior prospect for yield enhancement toward nearly 100%. |
| Databáze: |
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