| Autor: |
Yadav, Saurabh, Dash, S., Patra, A. K., Umapathy, G. R., Ojha, S., Patel, Shiv P., Singh, R., Katharria, Y. S. |
| Zdroj: |
ECS Journal of Solid State Science and Technology; January 2020, Vol. 9 Issue: 4 p045015-045015, 1p |
| Abstrakt: |
In the present work, effect of swift heavy ion (SHI) irradiation on structural and optical properties of β-Ga2O3thin films was investigated. Different ion fluences (ϕ) of 120 MeV Ag9+ions ranging from 1 × 1011ions-cm−2to 5 × 1012ions-cm−2were employed. The films were grown at room temperature (RT) using electron beam evaporation method and post-deposition annealing was done at 900 °C in oxygen atmosphere. X-ray diffraction (XRD) and UV–visible (UV-Vis) spectroscopy data confirmed the formation of polycrystalline β-Ga2O3phase having a bandgap of ∼5.14 eV. An increase in the structural disorder, and decrease in the average crystallites size of β-Ga2O3with increasing ϕwas also revealed by XRD. Ga2O3thin films showed high transparency in the UV (upto 280 nm) and visible range with average transmittance of ∼80%. Rutherford backscattering spectrometry (RBS) revealed that the thin films were slightly O deficient. A low frequency vibration mode at 170 cm−1arising from liberation and translation of tetrahedra-octahedra chains in β-Ga2O3was observed through Raman spectroscopy. Scanning electron micrograph (SEM) images suggested that the films were fairly smooth. |
| Databáze: |
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