| Autor: |
Kim, Daeik, Bao, Shuyu, Tan, Chuan Seng, Nam, Ju Hyung, Saraswat, K. C., Nam, Donguk |
| Zdroj: |
ECS Transactions; August 2016, Vol. 75 Issue: 8 |
| Abstrakt: |
Germanium has been an important material in the field of group IV photonics and photonic-integrated circuits because of its superior optical properties over silicon such as high responsivity up to 1550 nm (C-band). Although the material quality of germanium plays an important role in improving the performance of germanium-based photonic devices, it has been a technical challenge to obtain a high-quality germanium layer on silicon due to large lattice mismatch between silicon and germanium. In this paper, we discuss the effect of germanium/silicon interface on germanium-based optical devices. We present a couple of approaches to obtain a high-quality germanium layer on a silicon platform. By using various characterization techniques including transmission electron microscopy, time-resolved photoluminescence and steady-state photoluminescence, we show that the minority carrier lifetime and light emitting efficiency can be significantly improved in our engineered germanium-on-silicon platforms. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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