| Autor: |
Khomenkova, L., Kushnirenko, V.I., Osipyonok, N.M., Singaevsky, A.F., Pekar, G.S., Avramenko, K., Strelchuk, V.V., Borkovska, L.V. |
| Zdroj: |
ECS Transactions; April 2015, Vol. 66 Issue: 1 |
| Abstrakt: |
The effect of Sm3+and/or Ho3+ doping on structural and luminescent properties of screen-printed ZnO films sintered at 1000°C was investigated by photoluminescence (PL), PL excitation and Raman scattering methods. For all the films, ultraviolet excitonic and visible defect-related PL bands of ZnO were detected. The doping with Ho3+ions produced an enhancement of PL in ZnO films, the excitonic PL intensity being increased prominently, while the co-doping with Sm3+and Ho3+ions resulted in PL decrease in ZnO films. Only for (Sm,Ho)- co-doped ZnO films, the rare-earth PL bands were detected. The reduction of Sm3+to Sm2+was observed demonstrating 5D0→7FJradiative transitions. The mechanism of PL and PL excitation is discussed in terms of the formation of rare-earth complexes as well as energy transfer towards them from ZnO host. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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