Autor: |
Fischetti, Massimo V, Aboud, Shela J, Ong, Zhun-Yong, Kim, Jiseok, Narayanan, Sudarshan, Sachs, Catherine E |
Zdroj: |
ECS Transactions; August 2013, Vol. 58 Issue: 7 |
Abstrakt: |
We argue that intrinsically low-dimensionality materials may be needed to scale VLSI devices beyond 10 nm. We present examples of the use of empirical pseudopotentials to study the electronic structure and transport materials such as thin semiconductor bodies used in scaled VLSI devices, graphene, and nanoribbons. |
Databáze: |
Supplemental Index |
Externí odkaz: |
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