| Abstrakt: |
In this paper, the advantage and limitation of different alkali photoresist stripper is reviewed. Different from traditional dry film stripper, tetramethyl ammonium hydroxide is adopted to replace potassium hydoxide as an etchant to prevent precipitation. In details, the substrate protection, such as Al, Cu, Ag and Sn, is studied, and angstrom level etch rate is received with the carefully-designed inhibitor system; Secondly, the effective photoresist removal performance is acheived with the components balance; In the end, the cleaning mechanism and capability of this novel photoresist removal stripper are disclosed. |
