| Autor: |
Haarahiltunen, Antti, Väinölä, Hele, Yli-Koski, Marko, Sinkkonen, Juha, Anttila, Olli |
| Zdroj: |
ECS Transactions; October 2006, Vol. 3 Issue: 4 |
| Abstrakt: |
We present a model for heterogeneous precipitation of iron in silicon. In the model Fokker-Planck Equation is used to simulate the evolution of size distribution of iron precipitates. From the simulation results we may conclude, that in case of low levels of initial iron concentration (<1×1012 cm-3), internal gettering is difficult to achieve just by cooling. The low level of initial iron concentration can be gettered by using an additional nucleation step, which can be just a fast ramp to room temperature, before isothermal gettering anneal. We also analyze the effect of competitive gettering on the final iron concentration and the iron precipitate density profile. We found that internal gettering can reduce iron concentration and the particular advantage is the reduction of the iron precipitate density in the device layer. The iron precipitation in the device layer can also be reduced by increasing the doping concentration as the segregation increases. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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