| Autor: |
Kirsch, Paul D., Quevedo-Lopez, Manuel, Krishnan, Siddarth, Song, Seung-Chul, Choi, Rino, Majhi, Prashant, Senzaki, Yoshi, Bersuker, Gennadi, Lee, Byoung Hun |
| Zdroj: |
ECS Transactions; July 2006, Vol. 1 Issue: 10 |
| Abstrakt: |
Atomic layer deposited (ALD) Hf-based dielectrics have been studied to understand scaling, electron mobility, and threshold voltage stability issues in transistor devices. ALD HfO2 formed from TEMAHf and O3 was found to reach a scaling limit near Tphys=1.2 nm. Knowledge of this limit is important because mobility improvements are observed as HfO2 is scaled to 2.0 nm and below. Concurrent with mobility improvement, a reduction in transient charging is manifested as improved VTH and Id stability during constant voltage stress. HfO2 attributes include the following: EOT=1.0 nm, >100× Jg reduction vs. SiO2/PolySi, high field mobility of 82% universal SiO2 and ~20 mV of DVTH after 1000s stress at 1.8V. Similar results can be obtained for (HfO2)x(SiO2)1-x alloys. These results suggest that high-k dielectrics can be competitive with the current gate dielectric material SiON. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
