| Autor: |
Song, Kerry, Cao, Christian, Shi, Fengjun, Xu, Yanting, Yang, Shunbin, Wei, Zhongya, Guo, Shunhua |
| Zdroj: |
ECS Transactions; February 2014, Vol. 60 Issue: 1 |
| Abstrakt: |
As the technology node is advanced to 28nm and below, several new materials are introduced such as ultra low-k dielectric and metal hard mask. This presents critical chalenges to Cu-CMP in terms of k-shift, poor within-die uniformity and deteriorated breakdown voltage. Such issues must be resolved before moving to mass production. This paper presents a practical solution with improved barrier slurry and process for high performance of ULK/Cu interconnects at the advacned technology node. Through balancing the removal rates of various films, the reasonable topography is obtained. Slurry formulation refinement and post-CMP treatment are applied together to recover k value and to improve within-die range under optimized process conditions. While the surface property and breakdown voltage of the metal layer have been studied, it’s found that post-polish cleaning in combination with CMP slurry plays a major role to enhance reliability. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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