| Autor: |
Xing, Bin, Hao, Jingan, Deng, Guogui, Zhao, Jian, Wu, Qiang |
| Zdroj: |
ECS Transactions; February 2014, Vol. 60 Issue: 1 |
| Abstrakt: |
When the semiconductor technology enters the 28 nm and below, defectivity becomes increasingly difficult to detect and remove. In this paper, we studied one kind of water-spot like defect which was first suspected to originate from the immersion lithography process. After immersion lithography, a step-by-step defect tracing had been performed among several reactive ion etch (RIE) steps and after chemical mechanical planarization (CMP). We found that the relatively long delay time between the wet process after hard mask (HM) etch and organic dielectric layer (ODL) coating process could be one possible origin for this water-spot like defect. Our analysis also showed that the defect can be caused by the bubbles generated during the ODL coating process, whose round shape resembles very much the relatively speaking more familiar water spot defect. Based on the above analysis, we have optimized our coating process to reduce the defect density and our results will be presented |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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