| Autor: |
Wongwanitwattana, Chalermwat, Shah, Vishal Ajit, Myronov, Maksym, Parker, Evan H C, Whall, Terry E, Leadley, David R |
| Zdroj: |
ECS Transactions; March 2013, Vol. 50 Issue: 9 |
| Abstrakt: |
The effect of reactive ion etching (RIE) of Silicon (Si), Germanium (Ge) and highly phosphorous doped Germanium (Ge:P) in an SF6-O2plasma has been studied. We find that the etch characteristics of etch rate and sidewall profile are greatly affected by the O2content. Etching rates of Ge and Ge:P depend on the O2content with a significant reduction up to 20% of O2. We also find that an anisotropic sidewall etching mechanism exists and is dependent on the percentage of O2(%O2) in the plasma. Sidewall angles range from a minimum of 66° to a maximum of 166°, where a critical concentration for etching angle exists where the etching angle can alternate from below 90° to above 90°. In combination, both features allow for precision plasma etching of Si, Ge and Ge:P. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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