Abstrakt: |
The last few years have seen significant developments in ion implantation: Commercial implanters are now available with cryogenic capabilities to enable significant reductions in implant induced crystal damage; Plasma doping tools are now extensively used in fabs; Modified sources and new chemistries have been developed that allow some implants to be replaced by more exotic molecular implants to enable simultaneous co-implants and minimize end of range damage; Today's implanters give better dopant placement performance than ever before. These changes have been driven by CMOS scaling challenges, particularly at 32nm and 22nm, along with changes in thermal processing and the emergence of new implant applications. Details of some of these developments are given along with some explanation of the changes that have made them necessary. |