| Autor: |
Baik, Kwang Hyeon, Lim, Wantae, Pearton, Stephen, Wang, Yu-Lin, Ren, Fan, Yang, Jeongyeol, Jang, Soohwan |
| Zdroj: |
ECS Transactions; April 2010, Vol. 28 Issue: 4 |
| Abstrakt: |
The performance of Pd/GaN Schottky diodes fabricated on a-plane GaN for hydrogen sensing was investigated. Pd Schottky diode on non-polar a-plane (11-20) GaN layers shows large increases in both forward and reverse bias current upon exposure to 4% H2 in N2. The barrier height reduction due to hydrogen exposure is 0.11 eV with long recovery times (>25 mins) at room temperature. The sensitivity to hydrogen is significantly greater than for diodes on conventional c-plane (Ga-polar) GaN. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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