| Autor: |
Jouili, Mohamed, Andrieux, Michel, Gallet, Isabelle, Prud'Homme, Nathalie, Ji, Vincent |
| Zdroj: |
ECS Transactions; September 2009, Vol. 25 Issue: 8 |
| Abstrakt: |
Zirconia films were deposited by MOCVD using Zr2(OiPr)6(thd)2 on silicon substrate under different pressures. They were characterized for crystalline structure, crystallite size (~5-6 nm) by Grazing incidence X-ray diffraction and by FEG-SEM for microstructure and morphology. GIXRD patterns showed the predominance of the tetragonal phase (or cubic). The intensities ratio of the diffraction peaks between (111)t-c and (200)t c lattice planes increased with the pressure and, consequently, with the film thickness. The films morphology, as well as the stress levels in such ZrO2 films were different as a function of their thickness: compressive growth stress in the thinner layers and tensile growth stress for the thick one. A high peak intensity was observed at the center of the {200} pole figures showing that the majority of the surfaces plane were parallel to (100) plane. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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