| Autor: |
Matsumoto, Satoru, Aid, S. R., Seto, S., Toyonaga, K., Nakabayashi, Y., Sakuraba, M., Shimamune, Y., Hashiba, Y., Murota, J., Wada, K., Abe, T. |
| Zdroj: |
ECS Transactions; April 2006, Vol. 2 Issue: 2 |
| Abstrakt: |
Si self-diffusivity in heavily B-doped Si at 867-1-67C has been determined directly using highly pure isotope 30Si as a diffusion source. Samples consist of 30Si epi-layer/B-doped natural Si epi-layer/natural Si substrates. Si self- diffusivity increases with the increase of B concentration and its enhancement degree is larger at lower diffusion temperatures. Based on the model of the Fermi level effect, energy levels of donor Si self-interstitial and acceptor vacancy are determined from the analysis of the experimental data. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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