| Autor: |
Kweon, Youngdo, Park, Seungwook, Kim, Taehoon, Honh, Jupyo, Yang, Sijoong, Ha, Job, Kim, Taeho, Yi, Sung |
| Zdroj: |
ECS Transactions; March 2009, Vol. 18 Issue: 1 |
| Abstrakt: |
This study describes the wafer level 0.8x0.6 mm2 SAW filter (Surface Acoustic Wave Filter) with interconnection via and LiTaO3 (LT)-LiTaO3 (LT) wafer bonding structure. The via formation for interconnection is based on smaller package manufacture. The interconnection via is made by blind via and wafer thinning process. The blind via is formed by sand blasting process or laser drilling process. The eutectic bonding is applied to LT and LT bonding with Au-Sn for device protection and pads interconnection. These processes enable the wafer level saw filter. The result of electrical performance and laser process and sandblaster process for wafer level SAW filter package is discussed |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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